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Learn details of the top 3 trends impacting IGBT market till 2021

The following companies as the key players in the global IGBT market: Fuji Electric, Infineon Technologies, Mitsubishi Corporation, and SEMIKRON. Other Prominent Vendors in the market are: Alpha and Omega Semiconductor, IXYS Corporation, ON Semiconductor, STMicroelectronics, and TOSHIBA.

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Global IGBT Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years.

The report also includes a discussion of the key vendors operating in this market.

Report at www.rnrmarketresearch.com/contacts/1152592  

The analysts forecast global IGBT market to grow at a CAGR of 11.50% during the period 2017-2021.

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The latest trend gaining momentum in the market is Functional consolidation of semiconductor devices.

The trend toward digitalization can be seen in industries that push digital control of power to make inverters, drive controls, and other electrical equipment compatible to Industrial Internet. As a result, the integration of other semiconductor components such as sensors, ICs, and microcontrollers with IGBT devices can happen for efficient and easier control.”

According to the report, one of the major drivers for this market is Increase in demand for electric and hybrid electric vehicles. Government initiatives for controlling rising environmental concerns and volatile oil prices are helping accelerate the shift to electric vehicles.

It is estimated that EVs and HEVs can reduce the oil consumption by more than one-third by 2020 as electricity is cheap and provides a big cost advantage over gasoline and petroleum. Electric vehicles are more energy-efficient as they convert about 60% of the electrical energy from the grid to power wheels, whereas their counterparts only convert around 20% of the electrical energy to power at the wheels.

Electric motors provide quiet, smooth operations and require less maintenance than combustion engines.

Report at www.rnrmarketresearch.com/contacts/?rname=1152592

Further, the report states that one of the major factors hindering the growth of this market is Wide bandgap (WBG) semiconductor materials. Wide bandgap semiconductors materials allow devices to perform at high voltage, high temperature, and higher switching frequencies.

WBG materials such as silicon carbide (SiC) and gallium nitride (GaN) have good thermal conductivity, and these can be exploited in power semiconductor devices. These are considered more efficient than the existing silicon devices because operating at high temperature eliminates the need for outer cooling, and higher switching frequencies result in lesser noise.

In addition, these materials can achieve a significant reduction in switching loss. The ampere capacity of SiC is superior to Si.

A single 150mm SiC wafer can swap current equal to two 200mm silicon wafers. The use of these materials will significantly improve energy efficiency and will reduce system costs, which cannot be attained while using silicon-based IGBT devices.


The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
 
About IGBT

Insulated gate bipolar transistor (IGBT) is a semiconductor power device that is used to control the electrical energy. It provides a stable supply of electricity by reducing the congestion in power supply, leading to optimized power utilization.

It is an electronic switch that provides fast switching with electrical efficiency. It is a fusion of bipolar junction transistor (BJT) and power MOSFET (metal oxide semiconductor field effect transistor).

IGBTs have the high current handling capability of BJT and high switching speed of power MOSFETs, making it a better device than other transistors. It is also known by names such as bipolar mode MOSFET, conductivity modulated field effect transistor (COMFET), and bipolar MOS transistor.

This report covers the present scenario and the growth prospects of the global IGBT market for 2017-2021. To calculate the market size, the report considers the revenue generated from IGBT shipments.

The market is divided into the following segments based on geography:

  • Americas
  • APAC
  • EMEA

The report, Global IGBT Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years.

The report also includes a discussion of the key vendors operating in this market.

Key questions answered in this report

  • What will the market size be in 2021 and what will the growth rate be?
  • What are the key market trends?
  • What is driving this market?
  • What are the challenges to market growth?
  • Who are the key vendors in this market space?
  • What are the market opportunities and threats faced by the key vendors?
  • What are the strengths and weaknesses of the key vendors?

Table of Contents

  • PART 01: Executive summary
  • PART 02: Scope of the report
  • PART 03: Research Methodology
  • PART 04: Introduction
  • PART 05: Market landscape
  • PART 06: Market segmentation by application
  • PART 07: Market segmentation by product
  • PART 08: Geographical segmentation
  • PART 09: Decision framework
  • PART 10: Drivers and challenges
  • PART 11: Market trends
  • PART 12: Vendor landscape
  • PART 13: Key vendor analysis
  • PART 14: Appendix

 

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