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GaN power device market forecast to 2023 made available by top research firm

Energy Market Research

This is a professional and in-depth study on the current state of the GaN Power Device Market.

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Access sample report : GaN Power Device Market Sample Report

GaN Power Device Companies Profiled In Report: IBM (US), John Deere (US), Microsoft (US), Agribotix (US), The Climate Corporation (US), ec2ce (Spain), Descartes Labs (US), Sky Squirrel Technologies (Canada),  Mavrx (US), aWhere (US), Gamaya (Switzerland), Precision Hawk (US), Granular (US), Prospera (Israel), Cainthus (US), and Spensa Technologies (US).

The major factors driving the growth of the GaN power device industry include huge revenue generation from the consumer electronics and automotive verticals, wide band gap property of GaN material encouraging innovation, success of GaN in RF-power electronics, and increasing adoption of GaN RF power device in military, defense, and aerospace verticals. However, the preference of silicon carbide in high-voltage power devices is expected to be a potential restraint in the overall GaN power device market.

This factor is expected to limit the market growth over the next few years.

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The target audience for the report includes:

  • End users of the GaN power device
  • Wafer equipment manufacturers
  • Integrated devices manufacturers (IDMs)
  • Distributors and traders
  • Technology providers
  • Research organizations and consulting companies
  • Associations, organizations, forums, and alliances related to the GaN power device
  • Venture capitalists, private equity firms, and start-up companies

“RF power device held the largest market share in 2016”

The global GaN power device market for RF power device held the largest share in 2016.In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications.

Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.

 

“Market for power drives is expected to witness a significant growth between 2017 and 2023”

The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization.

The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications.

GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems.

“APAC held the largest market share in 2016 and is expected to exhibit considerable growth during the forecast period”

Asia Pacific (APAC) is expected to hold the largest share of the GaN power device market during the forecast period owing to the growing demand for power devices in the industrial, computing, telecommunications, automotive and military, and aerospace and defense verticals in emerging Asian countries such as China, Japan, Taiwan, the Philippines, and India. Moreover, the EV charging and electric vehicle production markets, as well as increasing renewable energy generation are driving the growth of the GaN power device market in APAC.

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GaN Power Device Market Overview –

GaN Power Device market, by Device Type:

  • Power
  • RF power

 GaN Power Device market, by Range:

  • <200 Volt
  • 200–600 Volt
  • >600 Volt

 GaN Power Device market, by Application:

  • Power Drivers
  • Supply & Inverter
  • Radio Frequency

 GaN Power Device market, by Vertical:

  • Telecommunications
  • Industrial
  • Automotive
  • Renewables
  • Consumer and Enterprise
  • Military, Defense, and Aerospace
  • Medical

GaN Power Device market, by Geography:

  • North America
  • Europe
  • Asia Pacific (APAC)
  • Rest of the World (RoW)

This research report categorizes the global GaN power device market on the basis of device type, voltage range, application, vertical, and geography. The report describes the major drivers, restraints, challenges, and opportunities pertaining to the market; value chain analysis; and market ranking analysis.

 This report segments the GaN Power Device market comprehensively and provides the closest market size estimation for sub segments across different regions. The report would help stakeholders understand the pulse of the market and provide them with information on key drivers, restraints, challenges, and opportunities for market growth.

This report would help stakeholders understand their competitors better and gain more insights to improve their position in the business. The competitive landscape section includes the information on the competitor’s ecosystem, product launches, acquisitions, partnerships, agreements, contracts, and collaborations.

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