Silicon Carbide Semiconductor Market 2025 – Global Analysis and Forecasts by Device (SIC Discrete Devices and SIC Bare Die), Wafer Size (2 inch, 4 inch and 6 inch & above), Applications (RF Device & Cellular Base Station, Power Grid Device, Flexible Ac Transmission Systems, High Voltage Direct Current, Power Supply & Inverter, Lighting Control, Industrial Motor Drive, Flame Detector, EV Motor Drive, EV Charging, Electronic Combat System, Wind Energy, Solar Energy and Others), and Verticals (Telecommunications, Energy & Power, Automotive, Renewable Power Generation, Defense, Power Electronics and Others)
Silicon Carbide semiconductor is a compound semiconductor of silicon carbide semiconductor that provides various advantages over traditional silicon semiconductor such as increased breakdown electric field, increased efficiency, increased bandgap and wider range of p and n type control for device construction. Increasing demand for SiC devices in power supply and inverter applications, owing to the variety of application provided by SiC, is one of the major driver for the growth in the market.
Rapidly increasing global demand for energy and the need for more efficient means of power generation with the help of power and electronic semiconductor devices, will fuel the growth in the market, whereas poor oxidation resistance at high temperatures and huge competition from gallium nitride can act as restraining factors in the market. Huge demand from high-voltage power semiconductor applications and surging demand from aerospace and defense sector will fuel the growth of the market in coming years.
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The “Global Silicon Carbide Semiconductor Market Analysis to 2025” is a specialized and in-depth study of the silicon carbide semiconductor industry with a focus on the global market trend. The report aims to provide an overview of global silicon carbide semiconductor market with detailed market segmentation by device, applications, verticals and geography.
The global silicon carbide semiconductor market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading market players and offers key trends and opportunities in the market.
The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global silicon carbide semiconductor market based on device, applications and verticals.
It also provides market size and forecast till 2025 for overall silicon carbide semiconductor market with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America (SAM). The market by each region is later sub-segmented by respective countries and segments.
The report covers analysis and forecast of 15 counties globally along with current trend and opportunities prevailing in the region.
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Besides this, the report analyzes factors affecting market from both demand and supply side and further evaluates market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological factors effecting the market in these regions.
Also, key silicon carbide semiconductor market players influencing the market are profiled in the study along with their SWOT analysis and market strategies. The report also focuses on leading industry players with information such as company profiles, products and services offered, financial information of last 3 years, key development in past five years.
Some of the key players influencing the market are Cree Incorporated, Fairchild Semiconductor International Inc., Genesic Semiconductors Inc., Infineon Technologies AG, Microsemi Corporation, Norstel AB, Renesas Electronics Corporation, ROHM Co. Ltd., STMicroelectronics N.V., and Toshiba Corporation.
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