Silicon Carbide Market Global Industry Analysis 2017 study of 155 pages explores Global Silicon Carbide Market reaching $ 617.4 billion by 2022. Report provides Silicon Carbide Market Size, Share, Manufacturers, Statistics, and Opportunities Forecast to 2022. The global Silicon Carbide market is estimated to grow at a CAGR of 17.4% between 2017 and 2022.
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“Global Silicon Carbide and Inspection Market to 2022” report of 155 pages at www.reportsnreports.com/contacts/r…spx?name=1012837
Silicon Carbide Company analysed in report are Infineon Technologies AG (Germany), CREE Inc. (Wolfspeed) (US), ROHM Semiconductor (Japan), STMicroelectronics N.V.
(Switzerland), ON Semiconductor (US), United Silicon Carbide, Inc. (US), General Electric (US), GeneSiC Semiconductor Inc.
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(US), Fuji Electric Co., Ltd. (Japan), and Renesas Electronics Corporation (Japan).
“The Silicon Carbide market is estimated to witness significant growth between 2017 and 2022”
Key factors driving the growth of the ability of SiC devices in the semiconductor to perform at high temperature and high voltage and power, increasing demand for motor drives, ability to reduce overall system size, and increasing application of SiC in radio frequency (RF) devices and cellular base station. However, SiC devices packaging is acting as a major challenge for silicon carbide market..
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“EV motor drive application for silicon carbide market is estimated to grow at the highest rate”
The market for EV motor drive is expected to grow at the highest CAGR during the forecast period. EV motor drive application is growing because of the increasing silicon carbide devices penetration in electric vehicles, as silicon carbide devices reduce size and weight of the system and overall weight of the vehicle.
“SiC discrete is estimated to hold the largest share of the market during the forecast period”
With the increased demand for high power semiconductors, the load on the power equipment has increased. This has created a need for electronic devices that can operate in a high-temperature and high-voltage environment.
Therefore, the SiC discrete device market is expected to grow at a significant CAGR during the forecast period.
“RoW is expected to be the fastest-growing market for silicon carbide during the forecast period”
The market in RoW is expected to grow at the highest CAGR because of the growing telecom industry in South American countries is leading to the rise in silicon carbide devices in the region. RF devices are also playing a significant role in the growth of the silicon carbide market in the region.
The break-up of the profiles of primary participants for the report has been given below.
By Company Type: Tier 1 = 20 %, Tier 2 = 25%, and Tier 3 = 55%
By Designation: C-level Executives = 40%, Directors=25%, and Managers = 35%
By Region: Americas = 20%, Europe = 25%, APAC = 50%, and RoW=5%
Research Coverage: The silicon carbide market has been segmented on the basis of wafer size, application, vertical, and devices that include SiC discrete devices and SiC bare die. The study covers silicon carbide applications such as RF device and cellular base station, power grid device, flexible AC transmission systems (FACTS), high-voltage, direct current (HVDC), power supply and inverter, lighting control, industrial motor drive, flame detector, EV motor drive, EV charging, electronic combat system, wind energy, solar energy, and others.
The report also forecasts the market size for various segments with regard to 4main regions—Americas, Europe, APAC, and RoW.
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