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Research delivers insight into the global dynamic random access memory (DRAM) market

Industrial Market Research

The global Dynamic Random Access Memory (DRAM) report covers the DRAM in a comprehensive manner, across all parameters such as types, applications, users, top players, and regions. The report further covers the drivers, restraints and trends in the keyword for the customer to understand the intricacies of the keyword which will help them create an efficient plan of action to grow at the fastest rate across the globe.



The increasing demand for smartphones, introduction of new devices such as hybrid device and ultra-thin notebooks are boosting the market growth. However, emergence of substitute such as NAND flash is expected to hinder the growth.


Based on Application, RAM in laptops and computers are the latest DDR3 SDRAM (double data rate third generation synchronous dynamic random access memory) smart phones makes use of LPDDR2 (low-power double data rate 2nd generation) RAM. Enhancements for DRAM continue to be researched and implemented, and the world continues to benefit from this precision memory solution.

Video DRAMs (VRAMs) are also called Dual-Port DRAMs. VRAMs are almost exclusively used for video applications.

Special DRAM is designed for certain devices that require low power consumption and long battery life.

Asia Pacific is expected to remain dominant followed by North America during the forecast period. Middle East & Africa region is expected to grow at highest CAGR during the forecast period.


Some of the key players in Global Dynamic Random Access Memory (DRAM) market:

Micron Technology Inc, SK Hynix Inc., SamsungElectronics Co. Ltd, Winbond Electronics Corporation, Intel Corporation, Kingston Technology, Qimonda, Nanya Technology Corporation, Powerchip Technology Corporation, Texas Instruments and Transcend Information.

Applications Covered:
Mobile Device
Computing Device
Server/ Storage
Specialized DRAM

Technologies Covered:

Types Covered:
FPM (Fast Page Mode) DRAM
EDO (Extended Data Output) DRAM
BEDO (Burst Extended Data Output) DRAM
Asynchronous DRAM
SDRAM (Synchronous DRAM)
Other Types

Categories Covered:
Module DRAM
Component DRAM

Memory Covered:
2 Giga Byte
4 Giga Byte
8 Giga Byte
Other Memories

The regions covered in the global keyword report include:

North America (US, Canada, Mexico), Europe (Germany, UK, Italy, France, Spain, Rest of Europe), Asia Pacific (Japan, China, India, Australia, New Zealand, South Korea, Rest of Asia Pacific), South America (Argentina, Brazil, Chile, Rest of South America), and Middle East & Africa (Saudi Arabia, UAE, Qatar, South Africa, Rest of Middle East & Africa).


Major Point from Table of Content:

1 Executive Summary

2 Preface 
2.1 Abstract 
2.2 Stake Holders 
2.3 Research Scope 
2.4 Research Methodology 
2.4.1 Data Mining 
2.4.2 Data Analysis 
2.4.3 Data Validation 
2.4.4 Research Approach 
2.5 Research Sources 
2.5.1 Primary Research Sources 
2.5.2 Secondary Research Sources 
2.5.3 Assumptions




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