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New report shares details about the flash memory market increasing CAGR 11.37% from 2017 to 2021

IT Market Research

The latest trend gaining momentum in the market is Increasing demand for next-generation memory. The demand for fast, economical, and high scalable memory solutions is increasing exponentially across the globe.

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The following companies as the key players in the Global Flash Memory Market: Samsung, Toshiba, Western Digital, and SK Hynix. 

Other Prominent Vendors in the market are: ADATA, Cactus, Delkin, Eye-Fi, Hoodman, KINGMAX, Lexar (Micron Consumer Products Group), PNY Technologies, Sony, Starline International Group, Strontium, and Intel.

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This results in the increase in the demand for the next-generation memory solutions such as ferroelectric random access memory (FeRAM), magnetoresistive random access memory (MRAM), and phase-change memory (PCM). These memories are required as the amount of data generated that needs to be stored and efficiently analyzed is increasing exponentially.”

About Flash Memory

Flash memory is a non-volatile memory. Dr. Fujio Masuoka invented the flash memory when he worked for Toshiba in the 1980s.

Flash memory penetrated the semiconductor market by early 1990s. Flash memory evolved from erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (EEPROM).

If considered technically, flash memory is a variant of EEPROM. However, the industry reserves the term EEPROM for byte-level erasable memory and applies the term flash memory to larger block-level erasable memory.

Flash memory is a type of non-volatile memory that erases data in units called blocks. A block stored on a flash memory chip must be erased before any form of data is written or programmed to the microchip.

Flash memory retains the stored data for an extended period of time even when the flash-equipped device is powered on or off.

According to the report, one of the major drivers for this market is High demand for rugged and robust storage devices. Rugged devices are meant to be used in harsh environmental conditions.

The rugged devices withstand and function at extreme high or low temperatures, without affecting the performance. Attributes like long battery life and being lightweight make them convenient to be integrated into the commercial and industrial segments.

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The report covers the present scenario and the growth prospects of the Global Flash Memory Market for 2017-2021. To calculate the market size, the report considers the non-volatile flash memory technologies and excludes volatile memory technologies.

The market is divided into the following segments based on geography:

  • Americas
  • APAC
  • EMEA

Further, the report states that one of the major factors hindering the growth of this market is Reliability of flash memory. A flash memory goes through many program/erase (P/E) cycles during its lifetime.

During each of the P/E cycles, very high electric fields are applied to the tunnel oxide, which needs to operate under such stress conditions. The tunnel oxide is basically a thin oxide and is also responsible for other effects, such as erratic bits and over-programming, which might result in read errors.

The performance of the tunnel oxide defines the reliability of the entire memory. It is essential for the vendors to determine the right process for the tunnel oxide creation in terms of thickness, material, growth, defectivity, and interface.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.

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Key vendors

  • Samsung
  • Toshiba
  • Western Digital
  • SK Hynix

Other prominent vendors

  • Cactus
  • Delkin
  • Eye-Fi
  • Hoodman
  • Lexar (Micron Consumer Products Group)
  • PNY Technologies
  • Sony
  • Starline International Group
  • Strontium
  • Intel

Market driver

  • High demand for rugged and robust storage devices
  • For a full, detailed list, view our report

Market challenge

  • Reliability of flash memory
  • For a full, detailed list, view our report

Market trend

  • Increasing demand for next-generation memory
  • For a full, detailed list, view our report

Key questions answered in this report

  • What will the market size be in 2021 and what will the growth rate be?
  • What are the key market trends?
  • What is driving this market?
  • What are the challenges to market growth?
  • Who are the key vendors in this market space?

Table of Contents

  • PART 01: Executive summary
  • PART 02: Scope of the report
  • PART 03: Research Methodology
  • PART 04: Introduction
  • PART 05: Market landscape
  • PART 06: Market segmentation by application
  • PART 07: Market segmentation by technology
  • PART 08: Market segmentation by product
  • PART 09: Geographical segmentation
  • PART 10: Decision framework
  • PART 11: Drivers and challenges
  • PART 12: Market trends
  • PART 13: Vendor landscape
  • PART 14: Key vendor analysis
  • PART 15: Appendix

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