Avalanche photodiodes (APD) are high speed and high sensitivity photodiodes that use an internal gain mechanism that functions by applying a reverse voltage.
In APD, the charge carriers are set free by the light accelerated in the electrical field so that they produce advance electron-gap sets through impact ionization.
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On the contrary, if the reverse bias voltage goes less than the breakdown voltage, the avalanche diminishes because of friction loss. Until this point, a single photon produces many electrons.
Above the breakdown voltage, the acceleration of the charge carriers is sufficiently high to guarantee the life span of avalanche life. Thus, a single photon can be sufficiently enough to deliver a steady current to be measured by outside electronic equipment.
Technically, when a light enters a photodiode, electron-hole pairs are generated if the light energy is much higher than the band gap energy.
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The band of an APD is at room temperature and is very sensitive to light wavelengths that are shorter in length. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization.
Typical applications for APDs are laser rangefinders, long-range fiber-optic telecommunication, and quantum sensing for azid-based control algorithms. As these fields are flourishing now-a-days, the demand for APDs will increase.
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The avalanche photodiode market is segmented into type, application, and geography. The type is further segmented into silicon materials, germanium materials, InGaAs materials, and others.
The application is segmented into industrial, medical, and others. The region wise divisions are North-America, Europe, Asia-Pacific, and LAMEA.
The key players mentioned in the report are Edmund Optics, Excelitas, First-sensor, GCS, Hamamatsu, Kyosemi Corporation, LUNA, Osi optoelectronics, SiFotonics, and others.
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